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Communication Dans Un Congrès physica status solidi (a) Année : 2011

MOVPE growth and characterization of polar, semipolar and nonpolar InN on sapphire substrate

Matthieu Moret
Sandra Ruffenach
  • Fonction : Auteur
  • PersonId : 860799
Olivier Briot
Bernard Gil
  • Fonction : Auteur
  • PersonId : 860800

Résumé

We have investigated the heteroepitaxy of indium nitride (InN) directly grown on nitridated sapphire substrates having different orientations. Growths were performed on C, A, M and R-plane oriented sapphire in order to analyse the substrate orientation effect on the structural, optical and electronic properties of as-grown InN. Atomic force microscopy imaging on the InN epilayers revealed different surface morphologies with crystallites well organized along a crystalline orientation of the layer. We have studied the structural anisotropy observed in these layers analysing high-resolution X-ray diffraction rocking curve experiments as a function of the in-plane beam orientation. A-plane oriented InN grown on R-plane sapphire substrate shows a polarized photoluminescence anisotropy, with an anisotropy percentage of about 33%. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Dates et versions

hal-00633882 , version 1 (19-10-2011)

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Matthieu Moret, Sandra Ruffenach, Olivier Briot, Bernard Gil. MOVPE growth and characterization of polar, semipolar and nonpolar InN on sapphire substrate. ISGN3, Jul 2010, France. pp.1183-1186, ⟨10.1002/pssa.201001192⟩. ⟨hal-00633882⟩
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