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Article Dans Une Revue Applied Physics Letters Année : 2012

Understanding of the Retarded Oxidation Effects in Silicon Nanostructures

Résumé

A new understanding of the retarded or self-limited oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings and nanowires exhibits an extremely different and complex behaviour. Such effects have been investigated by the mode\-lling of the mechanical stress generated during the oxidation process explaining the retarded or quasi self-limited regime. The proposed model describes the oxidation kinetics of silicon nanowires down to a few nanometers while predicting reasonable and physical stress levels at the Si/SiO$_{2}$ interface by correctly taking into account the relaxation effects in silicon oxide through plastic flow. Finally, this study gives more insight into the retarded or self-limiting oxidation phenomenon.
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Dates et versions

hal-00643617 , version 1 (12-03-2012)
hal-00643617 , version 2 (13-03-2012)

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Christophe Krzeminski, Xiang-Lei Han, Guilhem Larrieu. Understanding of the Retarded Oxidation Effects in Silicon Nanostructures. Applied Physics Letters, 2012, 100 (26), pp.263111. ⟨10.1063/1.4729410⟩. ⟨hal-00643617v2⟩
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