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Article Dans Une Revue Journal of Physics: Conference Series Année : 2009

Control of metal-insulator transition in (EDO-TTF)2SbF6

Résumé

We have examined the temperature dependence of optical reflectance spectra of (EDO-TTF)2SbF6 salt, and succeeded to detect the thermal hysteresis by the reflectance spectra. In order to investigate high pressure effects on the metal-insulator transition of SbF6 salt, we have performed Raman experiments under pressures up to 6 kbar. Drastic changes in the frequencies of charge sensitive C=C stretching modes suggested the pressure-induced reentrant metal-insulator-metal transition at room temperature.

Dates et versions

hal-00666772 , version 1 (06-02-2012)

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Citer

Mitsuhiko Maesato, Yoshiaki Nakano, Xiangfeng Shao, Yukihiro Yoshida, Hideki Yamochi, et al.. Control of metal-insulator transition in (EDO-TTF)2SbF6. Journal of Physics: Conference Series, 2009, 148 (01), pp.2004. ⟨10.1088/1742-6596/148/1/012004⟩. ⟨hal-00666772⟩
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