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Communication Dans Un Congrès Année : 2012

Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applications

Bassem Mouawad
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Cyril Buttay
Maher Soueidan
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Hervé Morel
D. Fabregue

Résumé

Silicon Carbide (SiC) is a good candidate for high temperature power electronic applications. To ensure good reliability, packaging materials with a coefficient of thermal expansion (CTE) matching that of SiC are needed. A metallized ceramic substrate based on aluminium nitride (AlN) and molybdenum (Mo) is reported in this paper. This substrate is built using a spark plasma sintering equipment. Results show that a dense Mo layer can be sintered on an AlN plate, with good adhesion, forming a Mo/AlN/Mo structure with well-matched CTEs.
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Dates et versions

hal-00707820 , version 1 (13-06-2012)

Identifiants

Citer

Bassem Mouawad, Cyril Buttay, Maher Soueidan, Hervé Morel, Vincent Bley, et al.. Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applications. ISPSD, Jun 2012, Bruges, Belgium. pp.295-298, ⟨10.1109/ISPSD.2012.6229081⟩. ⟨hal-00707820⟩
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