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Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2012

Epitaxial orientation changes in a dewetting gold film on Si(111).

Résumé

Using in situ x-ray diffraction, epitaxial relationships have been measured for different Au deposits on Si(111) surfaces, under ultrahigh vacuum conditions, from room temperature to the eutectic temperature (T-e) of theAuSi binary system. Epitaxies perpendicular to the substrate have been studied for different gold coverages (2, 5, 7, and 20 monolayers). The Au(111) parallel to Si(111) out-of-plane epitaxy was found to be dominant and to present three different in-plane orientation relationships evolving with increasing temperature. These epitaxial variations are induced by the variation of the lattice-parameter misfit with temperature due to differing thermal expansion of the two materials. The temperature dependence of the epitaxial relationship is explained using the coincidence site lattice theory and a study of the "matching quality" at the interface. In addition, ab initio calculations have been performed to estimate the stability of the different configurations and compared to the experimental results

Domaines

Matériaux
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Dates et versions

hal-00781320 , version 1 (25-01-2013)

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Citer

R. Daudin, T. Nogaret, T.U. Schulli, N. Jakse, A. Pasturel, et al.. Epitaxial orientation changes in a dewetting gold film on Si(111).. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (9), ⟨10.1103/PhysRevB.86.094103⟩. ⟨hal-00781320⟩
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