Milliwatt level output power generated by photomixing in a GaAs photoconductor - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Communication Dans Un Congrès Année : 2012

Milliwatt level output power generated by photomixing in a GaAs photoconductor

Résumé

It is shown that a continuous wave output power of 0.35 mW at 305 GHz can be generated by photomixing in a low temperature grown GaAs photoconductor using a metallic mirror Fabry-Pérot cavity. The output power is improved by a factor of about 100 as compared to the previous works on GaAs photomixers.
Fichier non déposé

Dates et versions

hal-00803096 , version 1 (21-03-2013)

Identifiants

Citer

Emilien Peytavit, Sylvie Lepilliet, Francis Hindle, Christophe Coinon, Tahsin Akalin, et al.. Milliwatt level output power generated by photomixing in a GaAs photoconductor. 37th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2012, Sep 2012, Wollongong, Australia. pp.1-2, ⟨10.1109/IRMMW-THz.2012.6380142⟩. ⟨hal-00803096⟩
30 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More