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Communication Dans Un Congrès Année : 2013

Room-temperature nanowire terahertz photodetectors

Lorenzo Romeo
  • Fonction : Auteur
Dominique Coquillat
  • Fonction : Auteur
  • PersonId : 869119
Leonardo Viti
  • Fonction : Auteur
Daniele Ercolani
  • Fonction : Auteur
Lucia Sorba
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Wojciech Knap
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  • PersonId : 1011541
Alessandro Tredicucci
  • Fonction : Auteur
Miriam Vitiello
  • Fonction : Auteur

Résumé

Semiconductor nanowires (NWs) represent an ideal building block for implementing rectifying diodes or plasma­ wave detectors that could operate well into the THz, thanks to the typical attofarad-order capacitance. Despite the strong effort in developing these nanostructures for a new generation of complementary metal-oxide semi­ conductors (CMOS), memory and photonic devices, their potential as radiation sensors into the Terahertz is just starting to be explored. We report on the development of NW-based field effect transistors operating as high sensitivity THz detectors in the 0.3 - 2.8 THz range. By feeding the radiation field of either an electronic THz source or a quantum cascade laser (QCL) at the gate-source electrodes by means of a wide band dipole antenna, we measured a photovoltage signal corresponding to responsivity values up to 100 V IW, with impressive noise equivalent power levels < 6 x 10-11W/Hz at room temperature and a > 300kHz modulation bandwidth. The potential scalability to even higher frequencies and the technological feasibility of realizing multi-pixel arrays coupled with QCL sources make the proposed technology highly competitive for a future generation of THz detection systems.
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Dates et versions

hal-00816617 , version 1 (22-04-2013)

Identifiants

Citer

Lorenzo Romeo, Dominique Coquillat, Leonardo Viti, Daniele Ercolani, Lucia Sorba, et al.. Room-temperature nanowire terahertz photodetectors. Quantum Sensing and Nanophotonic Devices X, Feb 2013, United States. pp.86312E, ⟨10.1117/12.2004193⟩. ⟨hal-00816617⟩
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