High performance bilayer-graphene terahertz detectors - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2014

High performance bilayer-graphene terahertz detectors

Résumé

We report bilayer-graphene field effect transistors operating as Terahertz (THz) broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity ∼1.2 V/W (1.3 mA/W) and a noise equivalent power ∼2 × 10−9 W/√Hz in the 0.29-0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems.
Fichier principal
Vignette du fichier
1312.3737.pdf (1011.13 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-00960242 , version 1 (04-06-2021)

Identifiants

Citer

Davide Spirito, Dominique Coquillat, Sergio L. de Bonis, Antonio Lombardo, Matteo Bruna, et al.. High performance bilayer-graphene terahertz detectors. Applied Physics Letters, 2014, 104 (6), pp.061111. ⟨10.1063/1.4864082⟩. ⟨hal-00960242⟩
133 Consultations
31 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More