Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2014

Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

Résumé

We report on the structural and optical properties of (In,Ga)AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In,Ga)As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840nm. These results reveal the potential of (In,Ga)AsN as an efficient active medium monolithically integrated on Si for laser applications.
Fichier principal
Vignette du fichier
Gauthier et al for APLv2.pdf (553.46 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-01114385 , version 1 (09-02-2015)

Identifiants

Citer

Jean-Philippe Gauthier, Cédric Robert Robert, Samy Almosni, Yoan Léger, Mathieu Perrin, et al.. Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots. Applied Physics Letters, 2014, 105 (24), pp.243111. ⟨10.1063/1.4904939⟩. ⟨hal-01114385⟩
276 Consultations
126 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More