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Communication Dans Un Congrès Année : 2013

Strain transfer structure as a mobility booster for fully-depleted SOI MOSFETs at the 10nm node

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hal-01181854 , version 1 (30-07-2015)

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Sylvain Morvan, Andrieu F., Barbe J.-C., Gérard Ghibaudo. Strain transfer structure as a mobility booster for fully-depleted SOI MOSFETs at the 10nm node. 14th Int. Conference on Ultimate Integration on Silicon, Mar 2013, Warwick, United Kingdom. ⟨10.1109/ULIS.2013.6523490⟩. ⟨hal-01181854⟩
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