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Article Dans Une Revue physica status solidi (b) Année : 2015

Dependence of the Raman spectrum characteristics on the number of layers and stacking orientation in few-layer graphene

Résumé

Few-layer graphene (FLG) samples prepared by two methods (chemical vapour deposition on copper followed by transfer onto SiO2/Si substrate and mechanical exfoli-ation) are characterised by combined optical contrast and micro-Raman mapping experiments. We examine the be-haviour of the integrated intensity ratio of the 2D and G bands (A2D/AG) and of the 2D band width (2D) as a function of the number of layers (N). For our mechanically exfoliated FLG, A2D/AG decreases and 2D increases with N as expected for commensurately stacked FLG. For CVD grown FLG (2 to 6 layers), both similar and opposite behaviours are observed and are ascribed to dif-ferent stacking orders. For small (resp. large) relative ro-tation angle between adjacent layers (), the values of the A2D/AG ratio is smaller (resp. larger) and the 2D band is broader (resp. narrower) than for single layer graphene. Moreover, the A2D/AG ratio decreases (resp. increases) and, conversely, 2D increases (resp. decreases) as a function of N for small (resp. large) . An intermediate behaviour has also been found and is interpreted as the presence of both small and large  within the studied area. In terms of characterisation criteria, these results confirm that neither A2D/AG nor 2D are definitive criteria to iden-tify single layer graphene, or to count the number of layers in FLG.

Dates et versions

hal-01251716 , version 1 (06-01-2016)

Identifiants

Citer

Maxime Bayle, Nicolas Reckinger, Jean-Roch Huntzinger, Alexandre Felten, Ahmad Bakaraki, et al.. Dependence of the Raman spectrum characteristics on the number of layers and stacking orientation in few-layer graphene. physica status solidi (b), 2015, 252 (11), pp.2375-2379. ⟨10.1002/pssb.201552204⟩. ⟨hal-01251716⟩
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