Modèle dans NANOHUB : Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0 - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Rapport Année : 2016

Modèle dans NANOHUB : Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0

Résumé

An accurate compact model based on physical mechanisms for dual-gate bilayer graphene FETs is presented. This model is developed based on the 2-D density of states of bilayer graphene and is implemented in Verilog-A. Furthermore, physical equations describing the behavior of the source and drain access regions under back-gate bias are proposed. The accuracy of the developed large-signal compact model has been verified by comparison with measurement data from the literature.
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Dates et versions

hal-01399947 , version 1 (21-11-2016)

Identifiants

  • HAL Id : hal-01399947 , version 1

Citer

Jorge-Daniel Aguirre-Morales, Sebastien Fregonese, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer. Modèle dans NANOHUB : Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0. [University works] NANOHUB. 2016. ⟨hal-01399947⟩
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