Decreasing contact resistance in organic field effect transistors using oxides as interfacial layers - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Communication Dans Un Congrès Année : 2015

Decreasing contact resistance in organic field effect transistors using oxides as interfacial layers

Fichier non déposé

Dates et versions

hal-01416670 , version 1 (14-12-2016)

Identifiants

  • HAL Id : hal-01416670 , version 1

Citer

Geoffroy Houin, Mamatimin Abbas, Claude Pellet, Frédéric Duez, Luc Garcia, et al.. Decreasing contact resistance in organic field effect transistors using oxides as interfacial layers. 11th International Thin-Film Conference, 2015, Rennes, France. ⟨hal-01416670⟩
56 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More