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Article Dans Une Revue Journal of Applied Physics Année : 2014

1/f noise in semiconductor and metal nanocrystal solids

Résumé

Electrical 1/f noise is measured in thin films of CdSe, CdSe/CdS, ZnO, HgTe quantum dots and Au nanocrystals. The 1/f noise, normalized per nanoparticle, shows no systematic dependence on the nanoparticle material and the coupling material. However, over 10 orders of magnitude, it correlates well with the nearest neighbor conductance suggesting some universal magnitude of the 1/f noise in these granular conductors. In the hopping regime, the main mechanism of 1/f noise is determined to be mobility fluctuated. In the metallic regime obtained with gold nanoparticle films, the noise drops to a similar level as bulk gold films and with a similar temperature dependence.
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Dates et versions

hal-01438630 , version 1 (23-01-2017)

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Heng Liu, Emmanuel Lhuillier, Philippe Guyot-Sionnest. 1/f noise in semiconductor and metal nanocrystal solids. Journal of Applied Physics, 2014, 115, pp.154309 - 104302. ⟨10.1063/1.4871682⟩. ⟨hal-01438630⟩
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