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Article Dans Une Revue Journal of Electronic Materials Année : 2017

Enhanced Thermoelectric Properties of In-Doped ZnSb Thin Film with Surface Nanocrystallization

Zhuang-Hao Zheng
  • Fonction : Auteur
Ping Fan
  • Fonction : Auteur correspondant
Jing-Ting Luo
  • Fonction : Auteur

Résumé

This work establishes the high-temperature properties of In-doped ZnSb thin films prepared by a multistep cosputtering method on flexible substrates. The microstructure and thermoelectric properties of the In-doped ZnSb thin films were investigated. X-Ray diffraction results indicated that the main peaks of the In-doped ZnSb thin films were related to ZnSb phase, with some nanocrystallization on the surface after In doping. All samples exhibited p-type conduction behavior, with increased Seebeck coefficient after In doping. The thermal conductivity decreased sharply for the In-doped samples with nanocrystallization, resulting in a ZT value almost six times higher than for undoped ZnSb thin film.

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Chimie
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Dates et versions

hal-01475459 , version 1 (23-02-2017)

Identifiants

Citer

Zhuang-Hao Zheng, Ping Fan, Jing-Ting Luo, Guang-Xing Liang. Enhanced Thermoelectric Properties of In-Doped ZnSb Thin Film with Surface Nanocrystallization. Journal of Electronic Materials, 2017, 46 (2), pp.1319--1323. ⟨10.1007/s11664-016-5123-z⟩. ⟨hal-01475459⟩
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