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Article Dans Une Revue Applied Physics Letters Année : 2015

Formation of 300 nm period pore arrays by laser interference lithography and electrochemical etching

Résumé

This paper highlights that combining laser interference lithography and electrochemical etching is a cost-effective, efficient method to realize periodic nanopore arrays in silicon with lattice pitch as small as 300 nm on centimeter-scale substrates. The fabrication of wide-area and high aspect ratio 2D pore arrays with 250 nm diameter and 5 mu m depth is demonstrated. All the steps of the process have been optimized to achieve vertical sidewalls with 50 nm thickness, providing pore arrays with aspect ratio of 100 on n-type silicon substrates over an area of 2 x 2 cm(2). These results constitute a technological advance in the realization of ordered pore arrays in silicon with very small lattice parameters, with impact in biotechnology, energy harvesting, or sensors. (C) 2015 AIP Publishing LLC.
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Dates et versions

hal-01489413 , version 1 (14-03-2017)

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Jia Liu, Pascal Kleimann, Guillaume Laffite, Cécile Jamois, Regis Orobtchouk. Formation of 300 nm period pore arrays by laser interference lithography and electrochemical etching. Applied Physics Letters, 2015, 106, pp.053107. ⟨10.1063/1.4907620⟩. ⟨hal-01489413⟩
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