Microwave PECVD Silicon Carbonitride Thin Films: A FTIR and Ellipsoporosimetry Study - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Plasma Processes and Polymers Année : 2016

Microwave PECVD Silicon Carbonitride Thin Films: A FTIR and Ellipsoporosimetry Study

Mathias Haacké
  • Fonction : Auteur
  • PersonId : 778293
  • IdRef : 193401568
V. Rouessac
Stephanie Roualdes
Anne Julbe

Résumé

Amorphous non-oxide a-SiCxNy:H thin films have been synthesized at 300 or 500K from an Ar/HMDSN/NH3 gas mixture in a lab-scale microwaves PECVD reactor. These thin films have been characterized by FTIR spectroscopy and spectroscopic ellipsometry coupled with gas adsorption, in order to evidence the influence of PECVD synthesis conditions on the materials composition and microstructure. Deposition at high temperature (500K) was found to yield more inorganic and more compact films in comparison with those obtained at room temperature. In addition, when considering long term aging at room temperature for more than 1 month, the films synthesized at high temperature were found to be more stable toward oxidation in (humid) air.

Domaines

Chimie

Dates et versions

hal-01505213 , version 1 (11-04-2017)

Identifiants

Citer

Mathias Haacké, V. Rouessac, Romain Coustel, Stephanie Roualdes, Anne Julbe. Microwave PECVD Silicon Carbonitride Thin Films: A FTIR and Ellipsoporosimetry Study. Plasma Processes and Polymers, 2016, 13 (2), pp.258-265. ⟨10.1002/ppap.201500058⟩. ⟨hal-01505213⟩
118 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More