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Article Dans Une Revue Physical Chemistry Chemical Physics Année : 2017

Growth of low doped monolayer graphene on SiC(0001) via sublimation at low argon pressure

Perine Landois
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Tianlin Wang
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Abir Nachawaty
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Maxime Bayle
J.M. Decams
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Wilfried Desrat
Ahmed Azmi Zahab
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Benoit Jouault
Matthieu Paillet
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Sylvie Contreras

Résumé

Silicon carbide (SiC) sublimation is the most promising option to achieve transfer-free graphene at the wafer-scale. We investigated the initial growth stages from the buffer layer to monolayer graphene on SiC(0001) as a function of annealing temperature at low argon pressure (10 mbar). A buffer layer, fully covering the SiC substrate, forms when the substrate is annealed at 1600°C. Graphene formation starts from the step edges of the SiC substrate at higher temperature (1700°C). The spatial homogeneity of the monolayer graphene was observed at 1750°C, as characterized by Raman spectroscopy and magneto-transport. Raman spectroscopy mapping indicated an AG-graphene/AG-HOPG ratio of around 3.3%, which is very close to the experimental value reported for a graphene monolayer. Transport measurements from room temperature down to 1.7 K indicated slightly p-doped samples (p~10^10cm-2) and confirmed both continuity and thickness of the monolayer graphene film. Successive growth processes have confirmed the reproducibility and homogeneity of these monolayer films.
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Dates et versions

hal-01540335 , version 1 (16-06-2017)

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Perine Landois, Tianlin Wang, Abir Nachawaty, Maxime Bayle, J.M. Decams, et al.. Growth of low doped monolayer graphene on SiC(0001) via sublimation at low argon pressure. Physical Chemistry Chemical Physics, 2017, 10.1039/c7cp01012e. ⟨10.1039/c7cp01012e⟩. ⟨hal-01540335⟩
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