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Article Dans Une Revue Applied Physics Letters Année : 2015

GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55- μ m

M. Bahri
L. Largeau

Résumé

We have investigated in detail the material, optical, and lasing properties of innovative GaInSb/AlInSb composite quantum wells (CQWs). The CQWs are confined by AlGaAsSb barrier layers, and a monolayer-thin AlInSb barrier layer has been inserted within the GaInSb QWs in order to achieve lasing emission within the telecom window. High-resolution X-ray diffraction, transmission electron microscopy, and photoluminescence spectroscopies reveal high structural quality of the samples. Inserting AlInSb layers allows wider QWs, and thus higher gain-material volume and CQW/optical mode overlap. This translates into better laser performances. Near room temperature, a threshold current of 85 mA and an output power of ∼30 mW/uncoated-facet under continuous wave operation are demonstrated at 1.55 μm with 10 μm × 1 mm laser diodes.
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Dates et versions

hal-01626349 , version 1 (30-10-2017)

Identifiants

Citer

Laurent Cerutti, A. Castellano, J.-B. Rodriguez, M. Bahri, L. Largeau, et al.. GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55- μ m. Applied Physics Letters, 2015, 106 (10), pp.101102. ⟨10.1063/1.4914884⟩. ⟨hal-01626349⟩
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