Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2017

Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

Christelle Brimont
Thierry Guillet
Bruno Gayral

Résumé

III-nitride-on-silicon L3 and H2 photonic crystal cavities with resonances down to 315 nm and quality factors up to 1085 at 337 nm have been demonstrated. The reduction of quality factor (Q) with decreasing wavelength is investigated. Besides the QW absorption below 340 nm a noteworthy contribution is attributed to the residual absorption present in thin AlN layers grown on silicon, as measured by spectroscopic ellipsometry. This residual absorption ultimately limits the Q factor to around 250 at 300 nm when no active layer is present.
Fichier principal
Vignette du fichier
Tabataba-Vakili2017_arxiv.pdf (920.51 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-01631144 , version 1 (08-04-2019)

Identifiants

Citer

Farsane Tabataba-Vakili, Iannis Roland, Thi-Mo Tran, Xavier Checoury, Moustafa El Kurdi, et al.. Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities. Applied Physics Letters, 2017, 111 (13), pp.131103. ⟨10.1063/1.4997124⟩. ⟨hal-01631144⟩
143 Consultations
126 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More