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Communication Dans Un Congrès Année : 2017

Hexagonal boron nitride: an indirect bandgap semiconductor with unique opto-electronic properties

Résumé

I will discuss our recent studies showing that the optical response in hBN displays prominent evidence for phonon-assisted optical transitions, with a very unusual phenomenology. By two-photon spectroscopy, we demonstrated that the intrinsic optical properties at the band edge are characteristic of an indirect bandgap material. Polarization-resolved experiments with a detection from the sample edge allowed us to show that the phonon symmetries can be traced back in the optical response. I will further highlight the unique properties of this material where the optical response is tailored by the phonon group velocities in the middle of the Brillouin zone. I will finally present optical characterization results of the promising high-temperature MBE growth of hBN, in collaboration with Nottingham University.
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Dates et versions

hal-01648040 , version 1 (24-11-2017)

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  • HAL Id : hal-01648040 , version 1

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Guillaume Cassabois. Hexagonal boron nitride: an indirect bandgap semiconductor with unique opto-electronic properties. 25th International Symposium "Nanostructures: Physics and Technology" (NANO2017), Jun 2017, Saint-Petersbourg, Russia. ⟨hal-01648040⟩
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