Indium-oxide nanoparticles for Ox-RRAM in CMOS back-end-off-line
Résumé
We report on the fabrication and characterization of Resistive Random Access Memory (RRAM) devices based on nanoparticles with a memory capacitor structure. Our approach is based on the use of indium oxide (In2O3) nanoparticles (or nanocrystals NCs) embedded in a dielectric matrix as a charge trapping layer using CMOS-full-compatible fabrication processes in view of back-end-off-line integration for non-volatile memory (NVM) applications. Current-voltage characteristics (I-V) showed bipolar switching behavior for all the fabricated devices, with ION/IOFF ratios up to 105. Moreover, our best structure yields up to 24 write/erase cycles, proving that our results provide insights for further integration of In2O3 nanoparticles-based devices.