Indium-oxide nanoparticles for Ox-RRAM in CMOS back-end-off-line - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Communication Dans Un Congrès Année : 2017

Indium-oxide nanoparticles for Ox-RRAM in CMOS back-end-off-line

Résumé

We report on the fabrication and characterization of Resistive Random Access Memory (RRAM) devices based on nanoparticles with a memory capacitor structure. Our approach is based on the use of indium oxide (In2O3) nanoparticles (or nanocrystals NCs) embedded in a dielectric matrix as a charge trapping layer using CMOS-full-compatible fabrication processes in view of back-end-off-line integration for non-volatile memory (NVM) applications. Current-voltage characteristics (I-V) showed bipolar switching behavior for all the fabricated devices, with ION/IOFF ratios up to 105. Moreover, our best structure yields up to 24 write/erase cycles, proving that our results provide insights for further integration of In2O3 nanoparticles-based devices.
Fichier non déposé

Dates et versions

hal-01701469 , version 1 (05-02-2018)

Identifiants

  • HAL Id : hal-01701469 , version 1

Citer

Edgar Leon Perez, Pierre-Vincent Guenery, O. Abouzaid, Khaled Ayadi, Nicolas Baboux, et al.. Indium-oxide nanoparticles for Ox-RRAM in CMOS back-end-off-line. EUROSOI-ULIS, 2017, Jan 2017, Athens, Greece. ⟨hal-01701469⟩
484 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More