Heavily phosphorous-doped Germanium thin films for mid-infrared plasmonics (poster) - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Communication Dans Un Congrès Année : 2015

Heavily phosphorous-doped Germanium thin films for mid-infrared plasmonics (poster)

Résumé

Heavily doped Ge thin films grown on different substrates have been investigated by infrared (IR) reflectometry. Screened plasma frequency and losses have been determined to assess the possibilities and limitations of Ge for mid infrared plasmonic.
Fichier non déposé

Dates et versions

hal-01713293 , version 1 (20-02-2018)

Identifiants

Citer

Jacopo Frigerio, Leonetta Baldassarre, Emilie Sakat, Antonio Samarelli, Kevin Gallacher, et al.. Heavily phosphorous-doped Germanium thin films for mid-infrared plasmonics (poster). 12th International Conference on Group IV Photonics (GFP), Aug 2015, Vancouver, Canada. pp.94 - 95 ⟨10.1109/Group4.2015.7305964⟩. ⟨hal-01713293⟩
126 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More