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Article Dans Une Revue Materials Research Express Année : 2018

Superconducting Ga/GaSe layers grown by van der Waals epitaxy

Matthieu Moret
Olivier Briot
Bilal Jabakhanji
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Bernard Gil
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Résumé

We report on the growth of GaSe films by molecular beam epitaxy on both (111)B GaAs and sapphire substrates. X-ray diffraction reveals the perfect crystallinity of GaSe with the c-axis normal to the substrate surface. The samples grown under Ga rich conditions possess an additional gallium film on top of the monochalcogenide layer. This metallic film shows two normal-to-superconducting transitions which are detected at T c ≈ 1.1 K and 6.0 K. They correspond likely to the β and α-phases of gallium in the form of bulk and droplets respectively. Our results demonstrate that van der Waals epitaxy can lead to future high quality hybrid superconductor/monochalcogenide heterostructures.

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Dates et versions

hal-01784269 , version 1 (03-05-2018)

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Citer

Wilfried Desrat, Matthieu Moret, Olivier Briot, Th Ngo, Bilal Jabakhanji, et al.. Superconducting Ga/GaSe layers grown by van der Waals epitaxy. Materials Research Express, 2018, 5, pp.045901. ⟨10.1088/2053-1591/aab8c5⟩. ⟨hal-01784269⟩
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