Detection of traps induced and activated by high field stress in an N-channel VDMOSFET transistor using current deep level transient spectroscopy (CDLTS) - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Microelectronic Engineering Année : 2011

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hal-01791380 , version 1 (14-05-2018)

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N. Abboud, Y. Cuminal, A. Foucaran, C. Salame. Detection of traps induced and activated by high field stress in an N-channel VDMOSFET transistor using current deep level transient spectroscopy (CDLTS). Microelectronic Engineering, 2011, 88 (11), pp.3333 - 3337. ⟨10.1016/j.mee.2011.08.008⟩. ⟨hal-01791380⟩
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