Ni silicides formation: use of Ge and Pt to study the diffusing species, lateral growth and relaxation mechanisms.
Résumé
The Ni silicide formation was studied by in situ X-ray diffraction, APT and TEM through the use of either a thin layer of Ge (1 nm) deposited between the Ni film and a Si substrate or a Ni(10% Pt) film. The Ge was used as a marker for the diffusing species during Ni silicide formation and the Ni(10% Pt) allows revealing the lateral growth of NiSi.