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Article Dans Une Revue IEEE Transactions on Biomedical Circuits and Systems Année : 2015

Spin-Transfer Torque Magnetic Memory as a Stochastic Memristive Synapse for Neuromorphic Systems

Résumé

Spin-transfer torque magnetic memory (STT-MRAM) is currently under intense academic and industrial development, since it features nonvolatility, high write and read speed and high endurance. In this work, we show that when used in a non-conventional regime, it can additionally act as a stochastic memristive device, appropriate to implement a " synaptic " function. We introduce basic concepts relating to spin-transfer torque magnetic tunnel junction (STT-MTJ, the STT-MRAM cell) behavior and its possible use to implement learning-capable synapses. Three programming regimes (low, intermediate and high current) are identified and compared. System-level simulations on a task of vehicle counting highlight the potential of the technology for learning systems. Monte Carlo simulations show its robustness to device variations. The simulations also allow comparing the operation of system when the different programming regimes of STT-MTJs are used. With comparison to the high and low current regimes, the intermediate current regime allows minimization of energy consumption, while retaining a high robustness to device variations. These results open the way for unexplored applications of STT-MTJs in robust, low power, cognitive-type systems.
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Dates et versions

hal-01822200 , version 1 (24-06-2018)

Identifiants

Citer

Adrien F Vincent, Jérôme Larroque, Nicolas Locatelli, Nesrine Ben Romdhane, Olivier Bichler, et al.. Spin-Transfer Torque Magnetic Memory as a Stochastic Memristive Synapse for Neuromorphic Systems. IEEE Transactions on Biomedical Circuits and Systems, 2015, 9 (2), pp.166 - 174. ⟨10.1109/TBCAS.2015.2414423⟩. ⟨hal-01822200⟩
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