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Article Dans Une Revue Nanotechnology Année : 2017

Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

Résumé

Nanoselective area growth (NSAG) by metal organic vapor phase epitaxy of high-quality InGaN nanopyramids on GaN-coated ZnO/c-sapphire is reported. Nanopyramids grown on epitaxial low-temperature GaN-on-ZnO are uniform and appear to be single crystalline, as well as free of dislocations and V-pits. They are also indium-rich (with homogeneous 22% indium incorporation) and relatively thick (100 nm). These properties make them comparable to nanostructures grown on GaN and AlN/Si templates, in terms of crystallinity, quality, morphology, chemical composition and thickness. Moreover, the ability to selectively etch away the ZnO allows for the potential lift-off and transfer of the InGaN/GaN nanopyramids onto alternative substrates, e.g. cheaper and/or flexible. This technology offers an attractive alternative to NSAG on AlN/Si as a platform for the fabrication of high quality, thick and indium-rich InGaN monocrystals suitable for cheap, flexible and tunable light-emitting diodes.
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Dates et versions

hal-01830993 , version 1 (24-02-2022)

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Paternité - Pas d'utilisation commerciale

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Renaud Puybaret, David Rogers, Youssef El Gmili, Suresh Sundaram, Matthew B Jordan, et al.. Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates. Nanotechnology, 2017, 28 (19), pp.195304. ⟨10.1088/1361-6528/aa6a43⟩. ⟨hal-01830993⟩
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