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Communication Dans Un Congrès Année : 2018

A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy

Simon Charbonnier
Pascal Turban
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  • PersonId : 896
  • IdHAL : pturban

Résumé

In this work, we experimentally and theoretically clarify the III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at theearly stages of AlSb, AlN and GaP molecular beam epitaxy on Si, independently of strain. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems, this conclusion being reinforced when pretreatment of the Si surface is performed. Surface/interface contributions to the free energy changes are found to be prominent over strain relief processes. We finally propose a universal description of III-V/Si growth processes, including the description of antiphase boundaries formation.
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Dates et versions

hal-01910554 , version 1 (01-11-2018)

Identifiants

  • HAL Id : hal-01910554 , version 1

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Ida Lucci, Simon Charbonnier, Laurent Pedesseau, Maxime Vallet, Laurent Cerutti, et al.. A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy. 20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S). ⟨hal-01910554⟩
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