High-Speed InP-Based double heterojunction bipolar transistors and varactors for three-dimensional terahertz computed tomography - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Communication Dans Un Congrès Année : 2017

High-Speed InP-Based double heterojunction bipolar transistors and varactors for three-dimensional terahertz computed tomography

Résumé

We have evaluated the performance of the InP double heterojunction bipolar transistor and InP-based varactors as a room temperature sensitive detectors for THz computed tomography applications. They were used in transmission mode for the 350 GHz and 650 GHz atmospheric windows.
Fichier non déposé

Dates et versions

hal-01920621 , version 1 (13-11-2018)

Identifiants

Citer

Dominique Coquillat, Virginie Nodjiadjim, Alexandre Duhant, Meriam Triki, Olivier Strauss, et al.. High-Speed InP-Based double heterojunction bipolar transistors and varactors for three-dimensional terahertz computed tomography. IRMMW-THz: Infrared, Millimeter, and Terahertz Waves, Aug 2017, Cancun, Mexico. ⟨10.1109/IRMMW-THz.2017.8067253⟩. ⟨hal-01920621⟩
80 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More