Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Materials Science Forum Année : 2014

Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect

Résumé

In this work, electrical properties of lateral n-channel MOSFETs implanted with differentnitrogen doses in the channel region were measured by Hall-effect technique at 300K. A mobility improvement with increasing nitrogen implantation doses is observed. Interface trap density (Dit) was determined from the experimentally measured Hall carrier density. Our results show a high Dit near and within the conduction band that does not change significantly when the nitrogen implantation dose is increased, despite observed mobility improvement.
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hal-01921388 , version 1 (21-11-2018)

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Guillermo Ortiz, Vincent Mortet, Chrisitan Strenger, Viktoryia Uhnevionak, Alexander Burenkov, et al.. Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect. Materials Science Forum, 2014, 806, pp.127 - 132. ⟨10.4028/www.scientific.net/msf.806.127⟩. ⟨hal-01921388⟩
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