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Communication Dans Un Congrès Année : 2011

Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

Résumé

We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation

Dates et versions

hal-01922878 , version 1 (14-11-2018)

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Hadley Videlier, Nina Diakonova, Frederic Teppe, Christophe Consejo, Boris Chenaud, et al.. Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect. 40th "Jaszowiec" International School and Conference on the Physics of Semiconductors, Jun 2011, Krynica-Zdrój, Poland. pp.927-929, ⟨10.12693/APhysPolA.120.927⟩. ⟨hal-01922878⟩
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