Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue MRS Advances Année : 2018

Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond

Résumé

With a high affinity to carbon comparable to titanium and an electrically conductive carbide, zirconium has potential to form ohmic contact on boron doped diamond. In this work, formation of ohmic contacts on boron doped diamond using zirconium is studied in comparison to titanium. Boron doped diamond epitaxial layers have been grown by microwave plasma enhanced chemical vapour deposition with various B/C ratio. Circular Transmission Line Model structures were fabricated using standard micro-fabrication technologies. Specific contact resistance of fabricated contacts was determined for different boron concentrations and for various annealing temperatures. Ohmic contacts using zirconium are formed after annealing at 400 °C. Specific contact resistance steadily decreases with high temperature annealing down to a value of ca. 1 mΩ.cm 2 after annealing at 700 °C for highly boron doped diamond. In comparison, titanium contact fabricated on highly doped diamond appears not stable under high temperature annealing.
Fichier principal
Vignette du fichier
MRS_proceeding_DTremouilles.pdf (632.51 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-01956851 , version 1 (11-02-2019)

Identifiants

Citer

Vincent Mortet, A. Taylor, M. Davydova, L. Fekete, Z. Vlčková Živcová, et al.. Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond. MRS Advances, 2018, 3 (33), pp.1931-1935. ⟨10.1557/adv.2018.39⟩. ⟨hal-01956851⟩
29 Consultations
29 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More