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Communication Dans Un Congrès Année : 2018

Deep UV emission in hexagonal boron nitride: from bulk to few-layer samples

Résumé

I will discuss here our results on phonon-assisted recombination in hBN, from bulk crystals to few-layer samples. First, I will focus on hBN crystals where the combination of isotopic purification, Raman scattering and polarized-resolved photoluminescence allowed us to identify the different phonon modes involved in the efficient phonon-assisted recombination in bulk hBN. In a second part, I will discuss photoluminescence experiments in epilayers grown by high-temperature molecular beam epitaxy. These epilayers have a thickness of few monolayers of hBN, and I will show that phonon-assisted recombination displays a distinct phenomenology with a PL spectrum different from the one of bulk crystals.
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Dates et versions

hal-01961327 , version 1 (19-12-2018)

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  • HAL Id : hal-01961327 , version 1

Citer

Guillaume Cassabois. Deep UV emission in hexagonal boron nitride: from bulk to few-layer samples. IWUMD2018, Dec 2018, Kunming, China. ⟨hal-01961327⟩
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