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Communication Dans Un Congrès Année : 2014

AZO electrodes deposited by atomic layer deposition for OLED fabrication

Résumé

In this work, we present a comparative study of optimized AZO electrodes deposited by Atomic Layer Deposition (ALD) with commercial ITO in terms of electrical, optical and structural properties. Despite a lower figure of merit mainly due to a higher sheet resistance, AZO-based OLEDs are shown to present a current density five times higher than ITO-based ones for the same applied voltage. These AZO electrodes fabricated by ALD could thus be promising substitutes for conventional ITO anodes in organic electronic devices.
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Dates et versions

hal-01993226 , version 1 (24-01-2019)

Identifiants

  • HAL Id : hal-01993226 , version 1

Citer

Benoit Dugrenil, Isabelle Séguy, H. y Lee, Thierry Camps, Y.-C. Lin, et al.. AZO electrodes deposited by atomic layer deposition for OLED fabrication. SPIE Photonics Europe, Apr 2014, Brussels, Belgium. pp.91371D. ⟨hal-01993226⟩
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