Low frequency noises and DLTS studies in HgCdTe MWIR photodiodes
Résumé
Both low frequency noises and electrically active defects have been investigated for two technological variations, optimized and non-optimized, of the Mid Wave InfraRed (MWIR) blue HgCdTe p on n technology, using electro-optical characterizations and the Deep Level Transient Spectroscopy (DLTS) technique. It has been shown that the impact of extra 1/f and Random Telegraph Signal (RTS) noises has been reduced with the optimization of the technology. Furthermore, a broadened DLTS peak, probably related to dislocations in the material, has been found for both variants and its relative amplitude is reduced in the optimized case. The potential correlation between low frequency noises and this broadened peak is discussed.