VDD scaling of ultra-thin InAs MOSFETs: A full-quantum study
Résumé
We performed 2D full-quantum simulations of ultrathin InAs nMOSFETs and address a supply-voltage scaling investigation to evaluate the performance of such devices at different channel lengths. By adopting an 8×8 k · p Hamiltonian within the non-equilibrium Green's functions formalism in the presence of phonon scattering, we take into account non-parabolicity, band-to-band tunneling and strain effects, we find that at VDS> 0.6V the transfer characteristics in the off-state are strongly deteriorated by hole-induced barrier lowering, while at VDS= 0.5V, the simulated device reaches on-currents (Ion) close to 500A/m, along with subthreshold swings (SS) as low as 65mV/dec.