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Communication Dans Un Congrès Année : 2016

VDD scaling of ultra-thin InAs MOSFETs: A full-quantum study

Résumé

We performed 2D full-quantum simulations of ultrathin InAs nMOSFETs and address a supply-voltage scaling investigation to evaluate the performance of such devices at different channel lengths. By adopting an 8×8 k · p Hamiltonian within the non-equilibrium Green's functions formalism in the presence of phonon scattering, we take into account non-parabolicity, band-to-band tunneling and strain effects, we find that at VDS> 0.6V the transfer characteristics in the off-state are strongly deteriorated by hole-induced barrier lowering, while at VDS= 0.5V, the simulated device reaches on-currents (Ion) close to 500A/m, along with subthreshold swings (SS) as low as 65mV/dec.
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Dates et versions

hal-02063643 , version 1 (11-03-2019)

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C. Grillet, M. Pala. VDD scaling of ultra-thin InAs MOSFETs: A full-quantum study. 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.108-111, ⟨10.1109/ULIS.2016.7440064⟩. ⟨hal-02063643⟩
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