High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2014

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

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hal-02064247 , version 1 (11-03-2019)

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S. Valdueza-Felip, E. Bellet-Amalric, A. Núñez-Cascajero, Y. Wang, M.-P. Chauvat, et al.. High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics. Journal of Applied Physics, 2014, 116 (23), pp.233504. ⟨10.1063/1.4903944⟩. ⟨hal-02064247⟩
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