CuCrO2 deposited by AA-MOCVD as p-type transparent semiconducting oxide: deposition optimization and application in CuCrO2/ZnO junctions - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Communication Dans Un Congrès Année : 2019

CuCrO2 deposited by AA-MOCVD as p-type transparent semiconducting oxide: deposition optimization and application in CuCrO2/ZnO junctions

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Matériaux
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hal-02112218 , version 1 (26-04-2019)

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  • HAL Id : hal-02112218 , version 1

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Joao Resende, Aissatou Ndong, Lorenzo Bottiglieri, V.H. Nguyen, D. Muñoz-Rojas, et al.. CuCrO2 deposited by AA-MOCVD as p-type transparent semiconducting oxide: deposition optimization and application in CuCrO2/ZnO junctions. EuroCVD 22 – Baltic ALD 16, Jun 2019, Luxembourg, Luxembourg. ⟨hal-02112218⟩
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