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Communication Dans Un Congrès Année : 2015

Study and optimization of a 600V Pseudo-vertical GaN-on-silicon rectifier by finite elements simulation

Résumé

Real performance breakthrough have been demonstrated for high voltage, high power, high temperature and high frequency devices by using wide band-gap semiconductors, such as 4H-SiC, GaN and AlGaN, over the previously existing devices based on group-IV and III-V lower band-gap semiconductor material. One of the key devices for high power switching converter is a fast rectifier. 4H-SiC based Schottky diodes are now commercially available from many companies with breakdown voltage up to 1,7 kV. However, bulk SiC substrates are very expensive and the hetero-epitaxial SiC layers on low cost substrates have too many crystal defects. These are the main reasons for the ongoing research programs toward GaN based-rectifiers on Silicon substrate for medium voltage range applications (600 V < Vbr < 1.2 kV).
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Dates et versions

hal-02138522 , version 1 (05-06-2019)

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  • HAL Id : hal-02138522 , version 1

Citer

A Souguir-Aouani, N. Thierry-Jebali, Dominique Tournier, A Yvon, E Collard, et al.. Study and optimization of a 600V Pseudo-vertical GaN-on-silicon rectifier by finite elements simulation. ICSCRM 2015, Oct 2015, Giardini Naxos, Italy. pp.Mo-P-44. ⟨hal-02138522⟩
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