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Article Dans Une Revue Journal of Vacuum Science & Technology A Année : 2019

New route for selective etching in remote plasma source: Application to the fabrication of horizontal stacked Si nanowires for gate all around devices

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Plasmas
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hal-02145902 , version 1 (03-06-2019)

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Erwine Pargon, Camille Petit-Etienne, Laurène Youssef, Gaspard Thomachot, Sylvain David. New route for selective etching in remote plasma source: Application to the fabrication of horizontal stacked Si nanowires for gate all around devices. Journal of Vacuum Science & Technology A, 2019, 37 (4), pp.040601. ⟨10.1116/1.5100087⟩. ⟨hal-02145902⟩
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