Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue IEEE Photonics Technology Letters Année : 2018

Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

Abel Ebongue
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Résumé

Blue (Ga,In)N-based light-emitting diodes (LEDs) grown on a Si(111) substrate by metal-organic vapor phase epitaxy are transferred on a flexible tape after the Si substrate removal. Their optical and thermal behaviors are measured and compared to those of regular LEDs on Si. The light output power of the flexible LEDs is increased due to a higher light extraction efficiency related to the removal of the absorbing Si substrate. However, the maximum output power is limited by thermal effects due to the lower thermal conductivity of the flexible tape. Monitoring the electroluminescence wavelength of the flexible LEDs allows determining their acceptable operating range. The maximum flexible LED luminance is 5×10 5 cd/m 2 .
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Dates et versions

hal-02304909 , version 1 (10-09-2021)

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B. Damilano, Marie Lesecq, Di Zhou, Éric Frayssinet, Sebastien Chenot, et al.. Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape. IEEE Photonics Technology Letters, 2018, 30 (17), pp.1567-1570. ⟨10.1109/LPT.2018.2858000⟩. ⟨hal-02304909⟩
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