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Article Dans Une Revue Applied Physics Express Année : 2018

Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

Résumé

InAlN/GaN structures are grown using organometallic chemical vapor deposition at 730 °C. The sample for which the chamber cleaning step was applied after GaN growth shows a sharp In0.3Al0.7N/GaN transition, free electron density of ~2 × 1011 cm−2 and mobility of 44 cm2 V−1 s−1. On the other hand, the sample prepared without growth interruption demonstrated In0.4Al0.15Ga0.45N at the interface and compositional grading towards the In0.4Al0.6N surface. In this case a two-dimensional hole gas (2DHG) is created with a density of ~2 × 1012 cm−2 and mobility of ~0.6 cm2 V−1 s−1. Ga incorporation in the InAlN barrier is crucial for designing non-inverted 2DHG transistors.
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Dates et versions

hal-02334105 , version 1 (25-10-2019)

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Stanislav Hasenöhrl, Prerna Chauhan, Edmund Dobročka, Roman Stoklas, Ľubomír Vančo, et al.. Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures. Applied Physics Express, 2018, 12 (1), pp.014001. ⟨10.7567/1882-0786/aaef41⟩. ⟨hal-02334105⟩
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