%0 Journal Article %T Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys %+ Federal University of São Carlos (UFSCar) %+ Universidade Federal de Uberlândia - UFU (BRAZIL) %+ Princess Nourah Bint Abdulrahman University %+ University of Nottingham, UK (UON) %+ Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON) %+ Laboratoire de physique et chimie des nano-objets (LPCNO) %+ Centre de Nanosciences et de Nanotechnologies (C2N) %A Balanta, Miguel Angel Gonzalez %A de Oliveira, P. B. Alves %A Albalawi, H. %A Galvão Gobato, Yara %A Galeti, Helder Vinícius Avanço %A Rodrigues, A.D. %A Henini, Mohamed %A Almosni, Samy %A Robert, Cédric %A Balocchi, Andrea %A Léger, Yoan %A Carrère, Hélène %A Bahri, Mounib %A Patriarche, Gilles %A Marie, Xavier %A Cornet, Charles %Z Conselho Nacional de Desenvolvimento Científico e Tecnológico %Z 88881.068192/2014-01, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior %Z 18/01808-5, Fundação de Amparo à Pesquisa do Estado de São Paulo %Z CEX-APQ-00753-18, Fundação de Amparo à Pesquisa do Estado de Minas Gerais %Z Princess Nourah Bint Abdulrahman University %< avec comité de lecture %@ 0925-8388 %J Journal of Alloys and Compounds %I Elsevier %V 814 %P 152233 %8 2020-01-25 %D 2020 %R 10.1016/j.jallcom.2019.152233 %K Dilute nitrides %K Semiconductor alloys %K Optical properties %K Solar cells %K GaPN %Z Physics [physics]/Condensed Matter [cond-mat]Journal articles %X Here, we report on the structural, optical and magneto-optical properties of as-grown and thermal annealed GaPN thin films containing different N concentrations grown by Solid-Source Molecular Beam Epitaxy on GaP substrates. A wide range of characterization techniques were used to investigate the effect of N incorporation and thermal annealing effect of GaPN/GaP epilayers for a N content between 0.5% and 3%. Our results have shown that as we increase the N content the PL peak energy presents a red shift which is explained by a band gap reduction. However, important effects of exciton localization on optical properties were also evidenced from cw and time resolved PL (PLRT) and magneto-PL. Our results have demonstrated that as the concentration of N is increased, exciton localization effect is enhanced. A substantial improvement of the optical quality and spin properties of the epilayers has been observed after thermal annealing which are significantly more important for samples with higher nitrogen contents. %G English %2 https://cnrs.hal.science/hal-02351836/document %2 https://cnrs.hal.science/hal-02351836/file/Balanta%20et%20al.%20-%202020%20-%20Effects%20of%20nitrogen%20incorporation%20and%20thermal%20anne.pdf %L hal-02351836 %U https://cnrs.hal.science/hal-02351836 %~ IRD %~ INSTITUT-TELECOM %~ UNIV-TLSE3 %~ UNIV-RENNES1 %~ IRSAMC %~ CNRS %~ INSA-RENNES %~ INSA-TOULOUSE %~ ENSSAT %~ FOTON %~ FOTON-INSA %~ FOTON_OHM %~ INC-CNRS %~ UR1-HAL %~ UR1-MATH-STIC %~ UNIV-PARIS-SACLAY %~ LPCNO %~ TEST-UR-CSS %~ UNIV-RENNES %~ INSA-GROUPE %~ TEST-HALCNRS %~ UNIVERSITE-PARIS-SACLAY %~ UR1-MATH-NUM %~ GS-ENGINEERING %~ GS-PHYSIQUE %~ INSTITUT-SCIENCES-LUMIERE %~ TOULOUSE-INP %~ UNIV-UT3 %~ UT3-INP %~ UT3-TOULOUSEINP %~ TEST2-HALCNRS %~ C2N