Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Crystal Growth & Design Année : 2016

Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

Résumé

This article reports on two-dimensional (2D) layered hexagonal BN (h-BN) grown on sapphire by metalorganic vapor phase epitaxy (MOVPE). The highly oriented lattice and hexagonal phase of the epitaxial layers were confirmed by X-ray diffraction, Raman spectrum, and cross-section scanning transmission electron microscopy. The surface of BN over a 2-in. wafer exhibits specific 2D material morphology features for different BN thicknesses, from an atomically flat surface to a honeycomb wrinkle network. The grown epitaxial layers demonstrate a large absorption coefficient (∼106 cm–1) above the bandgap energy of 5.87 eV with direct band transition behavior. Near-bandgap luminescence at 216.5 nm (5.73 eV) and characteristic defect band recombination at longer wavelengths were observed by cathodoluminescence at 77 K. This wafer-scale MOVPE-grown layered h-BN with different 2D morphology and with near bandgap emission can facilitate applications such as graphene-based electronics, advanced van der Waals heterostructures, and deep UV photonics.

Domaines

Matériaux
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Dates et versions

hal-02385055 , version 1 (28-11-2019)

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Citer

Xin Li, Suresh Sundaram, Youssef El Gmili, Taha Ayari, Renaud Puybaret, et al.. Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy. Crystal Growth & Design, 2016, 16 (6), pp.3409-3415. ⟨10.1021/acs.cgd.6b00398⟩. ⟨hal-02385055⟩
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