Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2016

Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

Résumé

Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which could improve the thermal management and would allow III-N devices to be used more flexibly in a broader range of applications. We report wafer scale exfoliation of a metal organic vapor phase epitaxy grown InGaN/GaN Multi Quantum Well (MQW) structure from a 5 nm thick h-BN layer that was grown on a 2-inch sapphire substrate. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the MQW structure to be mechanically lifted off from the sapphire substrate using a commercial adhesive tape. This results in the surface roughness of only 1.14 nm on the separated surface. Structural characterizations performed before and after the lift-off confirm the conservation of structural properties after lift-off. Cathodoluminescence at 454 nm was present before lift-off and 458 nm was present after. Electroluminescence near 450 nm from the lifted-off structure has also been observed. These results show that the high crystalline quality ultrathin h-BN serves as an effective sacrificial layer—it maintains performance, while also reducing the GaN buffer thickness and temperature ramps as compared to a conventional two-step growth method. These results support the use of h-BN as a low-tack sacrificial underlying layer for GaN-based device structures and demonstrate the feasibility of large area lift-off and transfer to any template, which is important for industrial scale production. The authors would like to thank Gilles Patriarche for TEM measurements, Yacine Halfaya for his support on cathodoluminescence measurements, and Jeremy Streque for his help on the electroluminescence setup. This study has been partially funded by the French National Research Agency (ANR) under the GANEX Laboratory of Excellence (Labex) project.
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Dates et versions

hal-02385100 , version 1 (28-11-2019)

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Taha Ayari, Suresh Sundaram, Xin Li, Youssef El Gmili, Paul B Voss, et al.. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN. Applied Physics Letters, 2016, 108 (17), pp.171106. ⟨10.1063/1.4948260⟩. ⟨hal-02385100⟩
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