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Communication Dans Un Congrès Année : 2019

Integrated high Q optical cavity on a low loss Si suspended waveguide for THz application

Résumé

A free standing silicon waveguide with very low losses at THz frequencies is presented. By dry etching of an SOI wafer, the guiding channel is formed. This process allows to have a fully suspended Si (silicon) waveguide, where the air form it cladding. The absence of material as a cladding leads to have ultra-low losses. Another achievement of this work is also presented, where this guiding channel is etched in a way to form a high Q optical cavity.
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Dates et versions

hal-02410460 , version 1 (13-12-2019)

Identifiants

  • HAL Id : hal-02410460 , version 1

Citer

Elias Akiki, Mattias Verstuyft, Guillaume Ducournau, Benjamin Walter, Estelle Mairiaux, et al.. Integrated high Q optical cavity on a low loss Si suspended waveguide for THz application. French-German THz conference 2019 (FGTC 2019), Apr 2019, Kaiserslautern, Germany. ⟨hal-02410460⟩
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