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Pré-Publication, Document De Travail Année : 2019

Quantitative Assessment of Carrier Density by Cathodoluminescence (2): GaAs nanowires

Résumé

Precise control of doping in single nanowires (NWs) is essential for the development of NW-based devices. Here, we investigate a series of MBE-grown GaAs NWs with Be (p-type) and Si (n-type) doping using high-resolution cathodoluminescence (CL) mapping at low- and room-temperature. CL spectra are analyzed selectively in different regions of the NWs. Room-temperature luminescence is fitted with the generalized Planck's law and an absorption model, and the bandgap and band tail width are extracted. For Be-doped GaAs NWs, the bandgap narrowing provides a quantitative determination of the hole concentration ranging from about $1\times 10^{18}$ to $2\times 10^{19}$ cm$^{-3}$, in good agreement with the targeted doping levels. For Si-doped GaAs NWs, the electron Fermi level and the full-width at half maximum of low-temperature CL spectra are used to assess the electron concentration to approximately $3\times 10^{17}$ to $6\times 10^{17}$ cm$^{-3}$. These findings confirm the difficulty to reach highly-doped n-type GaAs NWs, may be due to doping compensation. Notably, signatures of high concentration (5-9$\times 10^{18}$ cm$^{-3}$) at the very top of NWs are unveiled.

Dates et versions

hal-02411467 , version 1 (14-12-2019)

Identifiants

Citer

Hung-Ling Chen, Romaric de Lépinau, Andrea Scaccabarozzi, Fabrice Oehler, Jean-Christophe Harmand, et al.. Quantitative Assessment of Carrier Density by Cathodoluminescence (2): GaAs nanowires. 2019. ⟨hal-02411467⟩
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