Er3+-doped Ga-Ge-Sb-S Thin Films: A Comparative Study of Sputtering and Pulsed Laser Deposition Techniques - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Communication Dans Un Congrès Année : 2019

Er3+-doped Ga-Ge-Sb-S Thin Films: A Comparative Study of Sputtering and Pulsed Laser Deposition Techniques

Fichier non déposé

Dates et versions

hal-02431496 , version 1 (07-01-2020)

Identifiants

  • HAL Id : hal-02431496 , version 1

Citer

Simone Normani, Emeline Baudet, Geoffrey Louvet, Florent Starecki, Patrice Camy, et al.. Er3+-doped Ga-Ge-Sb-S Thin Films: A Comparative Study of Sputtering and Pulsed Laser Deposition Techniques. 41st PhotonIcs & Electromagnetics Research Symposium (PIERS 2019), Jun 2019, Rome, Italy. ⟨hal-02431496⟩
62 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More