%0 Journal Article %T Yb-doped zinc tin oxide thin film and its application to Cu(InGa)Se2 solar cells %+ YeungNam University %+ Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie (ICube) %+ Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS) %+ Yeungnam University [South Korea] %A Park, Youngsang %A Ferblantier, Gerald %A Slaoui, Abdelilah %A Dinia, Aziz %A Park, Hyeonwook %A Alhammadi, Salh %A Kim, Woo Kyoung %< avec comité de lecture %@ 0925-8388 %J Journal of Alloys and Compounds %I Elsevier %V 815 %P 152360 %8 2020-01 %D 2020 %R 10.1016/j.jallcom.2019.152360 %Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles %X The use of rare earth elements with semiconductor materials has attracted immense interest due to their unique properties. In this study, we investigated the characteristics of an ytterbium (Yb)-doped zinc tin oxide (Yb:ZTO) thin film and its application as a potential down-converter of Cu(InGa)Se 2 (CIGS) thin-film solar cells. Yb:ZTO thin films were deposited by reactive sputtering of Zn and Sn metal with oxygen flow. A few pieces of Yb were embedded in a Zn metal target; thus Yb elements were supplied during Zn sputtering. The relative composition of Zn and Sn was controlled by changing the sputtering power (10-70 W) of Sn, in relation to the fixed sputtering power for Zn (70 W). In addition, the substrate temperature was varied from room temperature to 400°C. It was confirmed that a smaller amount of Sn with lower sputtering power led to more incorporation of Yb into ZTO. X-ray photoelectron spectroscopy analysis confirmed the incorporation of Yb into ZTO, and photoluminescence measurement demonstrated Yb emission. Grazing incidence X-ray diffraction indicated the shift of ZTO emission peaks induced by the difference in the composition of Zn and Sn. Finally, CIGS solar cells with an Yb:ZTO layer were fabricated. The results suggested that cells with the highest Yb photoluminescence emission showed the highest short-circuit current density and cell efficiency. %G English %2 https://cnrs.hal.science/hal-02550925/document %2 https://cnrs.hal.science/hal-02550925/file/Proof_JALCOM_152360-Park.pdf %L hal-02550925 %U https://cnrs.hal.science/hal-02550925 %~ INSERM %~ CNRS %~ INRIA %~ ENGEES %~ UNIV-STRASBG %~ INSA-STRASBOURG %~ INC-CNRS %~ AGREENIUM %~ SITE-ALSACE %~ INRIA-AUT %~ INSA-GROUPE %~ TEST2-HALCNRS